Provisional Programme
Chaired by Sven Van Elschocht, IMEC (BE)
09.00 - Atomic layer deposited Ta2O5 thin film for the resistive switching memory - Cheol Seong Hwang ( Seoul National University, KR)
09.40 - Defect engineering of atomic layer deposited TiO2 for photocatalytic applications - Saari Jesse (FI)
10-00 - CuCrO2 deposited by AA-MOCVD as p-type transparent semiconducting oxide: deposition optimization and application in CuCrO2/ZnO junctions - Lorenzo Bottiglieri (FR)
10.20 - Support effect of Fe-Cu-Co thin film catalyst on CO oxidation - Waqas Muhammad (CHI)
10.40 - Coffee break
11.10 - Fabrication of WO3 thin films from a new tungsten precursor: Film growth and investigation of surface and sensing properties - Wilken Martin (DE)
11.30 - Towards high crystalline quality europium doped yttrium oxide thin films grown by ALD with optimized properties for quantum technologies - Scarafagio Marion (FR)
11.50 - ZnO thin films grown by plasma-enhanced atomic layer deposition: material properties in and outside the ALD window - Pilz Julian (AUT)
12.10 - Closing Session
Chaired by Tony Schenk, Luxembourg Institute of Science and Technology (LU)